장비사업

주요장비

• Dicing Plasma PM

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  • SOURCE	CCP
    Wafer Size	12”
    RF	Top & Bottom
    Process Chamber	Bottom Side Pumping Concept 2~4 CHAMBER.
    Process Gas	Dual Zone Gas Feed
    ESC	Bipolar & Dual Backside He Control.

• ETCH Plasma PM

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  • SOURCE	ICP, CCP
    Wafer Size	12”
    RF	Top & Bottom
    Process Chamber	Center Pumping Concept 2~4 CHAMBER.
    Process Gas	Dual Zone Gas Feed
    ESC	Unipolar & Dual Backside He Control.

• Pe_Cleaning Plasma PM

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  • SOURCE	RIE
    Wafer Size	Wafer, Glass
    RF	13.56MHz
    Plasma Chamber	Bottom Pumping Concept
    Process Gas	Single Top Feed
    ESC	None.

• Electrostatic Discharge Plasma Module

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  • SOURCE	RIE
    Wafer Size	Wafer, Glass
    RF	13.56MHz
    Plasma Chamber	Side Pumping Concept
    Process Gas	Single Top Feed
    ESC	None.

• Vacuum Oven System

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  • SOURCE	350℃
    Wafer Size	6”, 8’’
    Chamber	Cassette 2 Lots
    Temp	Ramp Up/Down 제어

• Plasma Electrostatic Exclusion System

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  • 적용가능 분야	LCD
    Size	6.5G
    Vacuum Pressure	대기압 ~ 10^-8 Torr
    Chamber	정전기 제거 Test용 Ch.
    설비 사이즈	2,500 x 1,600 x 1,060
    물류분야	L/L, PM.

• OLED Etch PM

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  • 적용가능 분야	LCD, OLED
    Alignment Typ	CCD Vision Aligner
    Vacuum Pressure	대기압 ~ 10^-5 Torr
    공정	GLASS ETCH
    설비 사이즈	2,300(W) x 1,500(D) x 2,000 (H)
    Plasma 응용	저온 Plasma (Cold Plasma) 열 Plasma (Thermal Plasma)

• OLED 증착 Evaporator PM

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  • Chamber	STS304
    EVA. Source	Point cell, Linear source
    Vacuum Pressure	Low Vacuum
    Size	5.5G
    Etc.	Thickness Controller, Substrate Heater, Substrate Rotation